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IBC Facilities
The Surrey IBC offers a wide range of implantation and ion beam analysis
facilities to the UK academic and industrial communities. If you want
to find out more about these techniques and how they can be used please click
here.
Implantation facilities include:
o 2MV High Energy Implanter
o 200kV High Current implanter
o Implantation 2 keV to 4 MeV
o Sample sizes mm2 to 40cm
x 40cm
o Hot (1000°C) or cold (~LN) implants
o In situ measurements can be made
o Sample Chambers in clean room (class
100)
o Up to 10mA beam currents available
Applications of implantation include:
o Dopant Implantation & Activation
o Materials Modification
o Synthesis e.g.: SIMOX, Silicides, Nitrides, MgB
2 GaN
o Defect Engineering
o Light emission from Si
o Carrier removal in III-V's
o Laser & waveguide fabrication
Ion Beam Analysis facilities include:
- 2MV Tandem Accelerator (3MeV p, 6MeV He)
- Range of techniques for rapid elemental depth profile analysis include:
RBS, EBS, ERD, PIXE, NRA
- Sub micron microbeam, with full scanning capability
- Channelling Spectroscopy for damage analysis of single crystals
- Fully automated sample manipulator
- Automated analysis system (DataFurnace) produces a single integrated
solution from multiple analyses of same sample together with error analysis
- External beam under development
Applications include:
- Thin Film Depth Profiling
- Major/minor/trace Element Compositional Analysis
- Disorder Profiling of Crystals
- 3-D elemental composition and mapping
- Hydrogen profiling
Materials Include:
- Semiconductors, Si, III-Vs, etc.
- Soft Solids
- Geological/Art & Archeology/ Cement/concrete
- Biological / Medical Materials
- Forensic Samples
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